900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GME

2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel Power Mosfet

No Preview Available !

Production specification
N-Channel Enhancement Mode Field Effect Transistor
2N7002
FEATURES
High Density Cell Design For Low
Pb
RDS(ON).
Lead-free
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
MSL 1
APPLICATIONS
N-channel enhancement mode effect transistor.
Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
2N7002
7002
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VDGR
VGSS
ID
PD
RθJA
Drain-Source voltage
60
Drain-Gate voltage(RGS≤1MΩ)
60
Gate -Source voltage - continuous ±20
-Non Repetitive (tp<50μs) ±40
Maximum Drain current -continuous 115
-Pulsed
800
Power Dissipation
200
Thermal resistance,Junction-to-Ambient 625
TJ, Tstg
Junction and Storage Temperature
-50 to +150
Units
V
V
V
mA
mW
/W
C008
Rev.A
www.gmesemi.com
1




GME

2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel Power Mosfet

No Preview Available !

Production specification
N-Channel Enhancement Mode Field Effect Transistor
2N7002
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-body Leakage Forward
Reverse
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source on-voltage
Forward transconductance
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(On)
VDS(ON)
gFS
VGS=0V,ID=10μA
VDS=VGS, ID=250μA
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
VDS=60V, VGS=0V
VDS=60V,VGS=0V,Tj=125
VGS=10V, VDS≥2.0VDS(ON)
VGS=10V,ID=500mA
VGS=5V,ID=50mA
VDS=10,ID=200mA
60 70
1-
--
--
--
--
0.5 1.0
- 0.6
- 0.09
80 -
MAX
-
2.0
1
-1
1
500
-
3.75
1.5
-
UNIT
V
uA
μA
A
V
mS
Static drain-Source on-resistance
RDS(ON)
VGS=5.0V,ID=50mA
VGS=10V,ID=500mA, Tj=100
-
-
3.2 7.5
4.4 13.5
Ω
On-state drain current
Drain-Source diode forward voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
ID(ON)
VSD
CISS
COSS
CRSS
tD(ON)
Turn-Off Delay Time
tD(OFF)
VGS=10V,VDS=7.5V
VGS=0V,IS=115mA
VDS=25V,VGS=0V,f=1.0MHz
VDD = 30V, ID= 0.2A,
RL = 150Ω, VGS= 10V,
RGEN= 25Ω
0.5 1.0 -
- 0.88 1.5
- 20 50
- 11 25
- 45
- - 20
- - 20
A
V
pF
ns
ns
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C008
Rev.A
www.gmesemi.com
2


Part Number 2N7002
Description N-Channel Power Mosfet
Maker GME
PDF Download

2N7002 Datasheet PDF






Similar Datasheet

1 2N700 PNP Transistor
Motorola
2 2N7000 TMOS FET Transistor
Motorola Inc
3 2N7000 N-channel MOSFET
NXP
4 2N7000 N-Channel MOSFET
Vishay Siliconix
5 2N7000 N-Channel MOSFET
NTE
6 2N7000 N-Channel MOSFET
INCHANGE
7 2N7000 N-Channel MOSFET
ST Microelectronics
8 2N7000 N-Channel MOSFET
ON Semiconductor
9 2N7000 N-Channel MOSFET
UTC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy