Production specification
N-Channel Enhancement Mode Field Effect Transistor
2N7002
FEATURES
High Density Cell Design For Low
Pb
RDS(ON).
Lead-free
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
MSL 1
APPLICATIONS
N-channel enhancement mode effect transistor.
Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
2N7002
7002
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VDGR
VGSS
ID
PD
RθJA
Drain-Source voltage
60
Drain-Gate voltage(RGS≤1MΩ)
60
Gate -Source voltage - continuous ±20
-Non Repetitive (tp<50μs) ±40
Maximum Drain current -continuous 115
-Pulsed
800
Power Dissipation
200
Thermal resistance,Junction-to-Ambient 625
TJ, Tstg
Junction and Storage Temperature
-50 to +150
Units
V
V
V
mA
mW
℃/W
℃
C008
Rev.A
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