2N7002 Datasheet | Galaxy Microelectronics

FEATURES - High Density Cell Design For Low Pb RDS(ON). Lead-free - Voltage Controlled Small Signal Switch. - Rugged and Reliable. - High Saturation Current Capability. - MSL 1 APPLICATIONS - N-channel enhancement mode effect transistor. - Switching application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous ±20 -Non Repetitive (tp<50μs) ±40 Maximum Drain current -continuous 115 -Pulsed Power Dissipation Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -50 to +150 Units V V V m A m W ℃/W...