2N7002W Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W Features z z z z z Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage. Pb Lead-free APPLICATIONS z z N-channel enhancement mode effect transistor. Switching application. SOT-323 ORDERING INFORMATION Type No. 2N7002W Marking 7002 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VDSS VDGR VGSS ID PD RθJA TJ, Tstg Parameter Drain-Source voltage Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Value 60 60 ±20 ±40 115 800 200 625 -55...