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2SA1797 - PNP Transistor

Features

  • Low saturation voltage VCE(sat)=-0.35V(Max. ) (IC/IB=-1A/-0.5A).
  • Excellent DC current gain characteristics.
  • Complements the 2SA1797 and 2SC4672.
  • MSL 3.

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Full PDF Text Transcription

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).  Excellent DC current gain characteristics.  Complements the 2SA1797 and 2SC4672.  MSL 3 APPLICATIONS  Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1797 AGP/AGQ 2SA1797 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage -50 VEBO IC PC Emitter-Base Voltage Collector Current Collector Dissipation -6 DC -2 Pulse -5 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ E027 Rev.A www.gmicroelec.
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