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Medium Power Transistor
FEATURES
z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA)
z High VCEO, VCEO=80V z Complements the 2SB1198K.
Pb
Lead-free
APPLICATIONS
z Epitaxial planar type NPN silicon transistor.
Production specification
2SD1782
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SD1782
AJ
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
80
Units V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
0.5 mA
PC Collector Dissipation
0.2 mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
℃
C251 Rev.A
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2SD1782 Datasheet
