2SD999 transistor equivalent, npn silicon transistor.
z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA)
z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A)
z Complements to PNP type 2SB.
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