BL15N30F Datasheet - GME

N-Channel Power MOSFET

* RDS(on) = 240 m　 (Typ.) @ VGS = 10 V, ID = 7.5 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 17 pF)

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Compliant APPLICATIONS

* Lighting

* Uninterruptible Power Supply MOSFET Maximum Ratings TC = 25oC unl

BL15N30F

GME

216.67 KB

N-channel power mosfet.

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BL15N30F N-Channel Power MOSFET GME

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