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BL15N30F - N-Channel Power MOSFET

Features

  • RDS(on) = 240 m　 (Typ. ) @ VGS = 10 V, ID = 7.5 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 17 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription

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N-Channel Power MOSFET FEATURES  RDS(on) = 240 m　 (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low Crss (Typ.
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