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BL2N60F Datasheet Preview

BL2N60F Datasheet

N-Channel Power MOSFET

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2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N60F
ITO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
ID
IDP
VGSS
Drain-Source voltage
Drain current continuous
Drain current Pulsed (Note2)
Gate -Source voltage
(TC=25)
(TC=100)
600
2.0
1.26
8.0
±30
V
A
A
V
IAR
EAR
EAS
dv/dt
Avalanche Current (Note2)
2.0
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
4.5
A
mJ
mJ
V/ns
Power Dissipation
(TC=25) 45
W
PD
Derate above 250.36
W/
TJ Junction Temperature
+150
TSTG
RθJA
Storage Temperature
Thermal Resistance Junction-Ambient
-55 ~ +150
70
/W
W097
Rev.A
www.gmesemi.com
1




GME

BL2N60F Datasheet Preview

BL2N60F Datasheet

N-Channel Power MOSFET

No Preview Available !

Production specification
2 Amps, 600 Volts N-CHANNEL MOSFET
BL2N60F
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ΔBVDSS/
ΔTJ
VGS=0V,ID=250μA
ID=250UA
600 -
- 0.4
Zero Gate Voltage Drain Current
IDSS
Gate-body Leakage
Forward
Reverse IGSS
VDS=600V, VGS=0V
VDS=480V,TC=125
VDS=0V, VGS=30V
VDS=0V, VGS=-30V
--
--
--
--
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250μA
2.0 -
Static drain-Source on-resistance
RDS(ON)
VGS=10V,ID=1A,
- 3.8
Forward transconductance
gFS
VDS=50V,ID=1A (Note1)
- 2.25
Input Capacitance
Output Capacitance
Ciss - 270
Coss
VDS=25V,VGS=0V,f=1.0MHz
-
40
Reverse Transfer Capacitance
Crss
-5
Turn-On Delay Time
td(on)
- 10
Turn-On Rise Time
Turn-Off Delay Time
tR
VDD=300V,ID=2.4A,RG=25Ω
-
25
td(off)
(Note1,2)
-
20
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf - 25
Qg
Qgs
VDS=480V,ID=2.4A,VGS=10V
(Note1,2)
-
-
9.0
1.6
Qgd - 4.3
Maximum Continuous Drain-Source
Diode Forward Current
ISD
--
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
--
Drain-Sourse Recovery Charge
VSD
VGS=0V,ISD=2.0A
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V,ISD=2.4A,
Qrr dIF/dt=100A/us (Note1)
Notes:
1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
--
- 180
- 0.72
MAX
-
-
10
100
100
-100
4.0
5
-
350
50
7
30
60
50
60
11
-
-
2.0
8.0
1.4
-
-
UNIT
V
V/
μA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
W097
Rev.A
www.gmesemi.com
2


Part Number BL2N60F
Description N-Channel Power MOSFET
Maker GME
Total Page 6 Pages
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