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BL2N60F - N-Channel Power MOSFET

Features

  • RDS(on)=3.8Ω@VGS=10V. Pb.
  • Ultra Low gate charge (typical 9.0nC) Lead-free.
  • Low reverse transfer capacitance (Crss = typical 5.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL2N60F ITO-220AB.

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Datasheet Details

Part number BL2N60F
Manufacturer GME
File Size 493.25 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BL2N60F Datasheet
Additional preview pages of the BL2N60F datasheet.

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Full PDF Text Transcription

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2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-free  Low reverse transfer capacitance (Crss = typical 5.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL2N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDP VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage (TC=25℃) (TC=100℃) 600 2.0 1.26 8.0 ±30 V A A V IAR EAR EAS dv/dt Avalanche Current (Note2) 2.0 Avalanche Energy Repetitive(Note 2) 4.5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.
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