BL2N60F
Key Features
- RDS(on)=3.8Ω@VGS=10V. Pb
- Ultra Low gate charge (typical 9.0nC) Lead-free
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness Production specification BL2N60F
