BL2N60I
BL2N60I is N-Channel Power Mosfet manufactured by Galaxy Microelectronics.
2 Amps, 600 Volts N-CHANNEL MOSFET
Features
- RDS(on)=3.8Ω@VGS=10V.
Pb
- Ultra Low gate charge (typical 9.0nC) Lead-free
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
Production specification
BL2N60I/2N60D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDP VGSS
Drain-Source voltage Drain current continuous
Drain current Pulsed (Note2) Gate -Source voltage
(TC=25℃) (TC=100℃)
2.0 1.26
±30
IAR EAR EAS dv/dt
Avalanche Current (Note2)
Avalanche...
