Datasheet4U Logo Datasheet4U.com
Galaxy Microelectronics logo

BL2N60D

Manufacturer: Galaxy Microelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

BL2N60D datasheet preview

Datasheet Details

Part number BL2N60D
Datasheet BL2N60D BL2N60I Datasheet (PDF)
File Size 383.57 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Power Mosfet
BL2N60D page 2 BL2N60D page 3

BL2N60D Overview

2 Amps, 600 Volts N-CHANNEL MOSFET.

BL2N60D Key Features

  • RDS(on)=3.8Ω@VGS=10V
  • Ultra Low gate charge (typical 9.0nC) Lead-free
  • Low reverse transfer capacitance (Crss = typical 5.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
Galaxy Microelectronics logo - Manufacturer

More Datasheets from Galaxy Microelectronics

See all Galaxy Microelectronics datasheets

Part Number Description
BL2N60F N-Channel Power MOSFET
BL2N60I N-Channel Power Mosfet
BL2N65D N-Channel Power Mosfet
BL2N65I N-Channel Power Mosfet
BL200N06-S8 N-Channel Enhancement Mode MOSFET
BL200N06R N-Channel Enhancement Mode MOSFET
BL200P03-3DL8 P-Channel Enhancement Mode MOSFET
BL2300 N-Channel Power Mosfet
BL2301 P-Channel Enhancement Mode Field Effect Transistor
BL2301W P-Channel Enhancement MOSFET

BL2N60D Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts