BL2N65I
BL2N65I is N-Channel Power Mosfet manufactured by Galaxy Microelectronics.
2 Amps, 600 Volts N-CHANNEL MOSFET
Features
- RDS(on)=3.8Ω@VGS=10V.
Pb
- Ultra Low gate charge (typical 9.0nC) Lead-free
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
Production specification
BL2N65I/2N65D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDM VGSS
Drain-Source voltage Drain current continuous Drain current Pulsed (Note2)
Gate -Source voltage
(TC=25℃)
650 2.0
8.0 ±30
IAR Avalanche Current (Note2)
2.0 A
EAR EAS dv/dt
Avalanche Energy
Repetitive(Note 2)...
