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BL2N65I

Manufacturer: Galaxy Microelectronics
BL2N65I datasheet preview

Datasheet Details

Part number BL2N65I
Datasheet BL2N65I-GME.pdf
File Size 309.94 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Power Mosfet
BL2N65I page 2 BL2N65I page 3

BL2N65I Overview

2 Amps, 600 Volts N-CHANNEL MOSFET.

BL2N65I Key Features

  • RDS(on)=3.8Ω@VGS=10V
  • Ultra Low gate charge (typical 9.0nC) Lead-free
  • Low reverse transfer capacitance (Crss = typical 5.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • 55 ~ +150
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