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GME

BL4N60I Datasheet Preview

BL4N60I Datasheet

N-Channel Power Mosfet

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4 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
Robust High Voltage Termination.
Avalanche Energy Specified.
Pb
Lead-free
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS And VSD (on) Specified at Elevated Temperature.
Production specification
BL4N60I/4N60D
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
Drain-Source voltage
600 V
ID Drain current continuous
4A
VGSS
IAR
PD
TJ
TSTG
RθJA
RθJc
Gate -Source voltage
Avalanche Current (Note2)
Power Dissipation
Junction Temperature
TA=25
Storage Temperature
Thermal Resistance Junction- Ambient Air
Thermal Resistance Junction-Case
±30
16
1.25
150
-50 ~ +150
100
1.78
V
A
W
/W
/W
W098
Rev.A
www.gmesemi.com
1




GME

BL4N60I Datasheet Preview

BL4N60I Datasheet

N-Channel Power Mosfet

No Preview Available !

Production specification
4 Amps, 600 Volts N-CHANNEL MOSFET BL4N60I/4N60D
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage
Forward
Reverse
Gate Threshold Voltage (Note1)
Static drain-Source on-resistance
(Note1)
Diode Forward Voltage (Note1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Test conditions
VGS=0V,ID=250μA
VDS=600V, VGS=0V
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
VDS=VGS, ID=250μA
MIN TYP
600 -
--
--
--
2.0 -
VGS=10V,ID=2A,
--
IDS=4A, VGS=0V
--
- 560
VDS=25V,VGS=0V,f=1.0MHz
-
60
- 4.8
1.Pulse Test : Pulse Width300μs, duty cycle2%.
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
MAX
-
1
1
-1
4.0
UNIT
V
μA
μA
V
2.3
1.5 V
-
- pF
-
W098
Rev.A
www.gmesemi.com
2


Part Number BL4N60I
Description N-Channel Power Mosfet
Maker GME
Total Page 4 Pages
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