BL4N65F Description
4A,650V N-Channel Power Mosfet.
BL4N65F Key Features
- RDS(ON) =2.5Ω@ VGS = 10V
- Ultra low gate charge ( typical 15 nC )
- Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- 55 to +150