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GME

BL5N65F Datasheet Preview

BL5N65F Datasheet

N-Channel Power Mosfet

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5A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.4@ VGS = 10V
Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL5N65F
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID
IDM
EAS
EAR
dv/dt
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt
PD Power Dissipation
RθJA Thermal resistance,Junction-to-Ambient
θJA Junction to Ambient
θJC Junction to Case
TJ Junction Temperature
TOPR, Tstg Operating and Storage Temperature
ITO-220AB
Value
650
±30
5
20
210
10
4.5
36
62.5
62.5
3.47
+150
-55 to +150
Units
V
V
A
A
mJ
V/ns
W
/W
/W
/W
S071
Rev.A
www.gmesemi.com
1




GME

BL5N65F Datasheet Preview

BL5N65F Datasheet

N-Channel Power Mosfet

No Preview Available !

Production specification
5A,650V N-Channel Power Mosfet
BL5N65F
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static drain-Source on-resistance
BVDSS
IDSS
IGSS
BVDSS
/TJ
VGS=0V,ID=250μA
VDS=650V, VGS=0V
VDS=0V, VGS=±30V
ID =250μA, Referenced
to25
VGS(th)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V,ID=2.5A
650
-
-
2.0
-
DYNAMIC CHARACTERISTICS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON)
tr
tD(OFF)
tf
VDD = 325V,
ID = 5A,
RG= 25
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = 520V
ID= 6.2A
VGS= 10V,
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source diode forward voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS=0V,Is=5A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
trr
Qrr
VGS=0V ,Is=5A,
dI/dt=100A/μs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
-
2.0
510
55
6.5
10
42
38
46
15
2.5
6.6
-
-
-
300
2.2
-
1
±100
4.0
2.4
670
72
8.5
30
90
85
100
19
-
-
1.4
5
20
-
-
V
μA
nA
V/
V
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
nS
uC
S071
Rev.A
www.gmesemi.com
2


Part Number BL5N65F
Description N-Channel Power Mosfet
Maker GME
Total Page 4 Pages
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