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KTA1666 - PNP Silicon Epitaxial Planar Transistor

Key Features

  • Pb z High speed switching time. Lead-free z Low saturation voltage:VCE(sat)=-0.5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package. z Complementary: KTC4379. KTA1666.

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Pb z High speed switching time. Lead-free z Low saturation voltage:VCE(sat)=-0.5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package. z Complementary: KTC4379. KTA1666 APPLICATIONS z Power amplifier application. z Power switching application. ORDERING INFORMATION Type No. Marking KTA1666 WO/WY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction Temperature Storage Temperature Range -50 -50 -5 -2 -0.4 500 150 -55 to +150 Units V V V A A mW ℃ ℃ E001 Rev.