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KTC4379 - NPN Silicon Epitaxial Planar Transistor

Key Features

  • Pb.
  • High speed switching time. Lead-free.
  • Low saturation voltage:VCE(sat)=0.5V(Max).
  • PC=1~2W(Mounted on ceramic substrate).
  • Small flat package.
  • Complementary: KTA1666. KTC4379.

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Full PDF Text Transcription for KTC4379 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC4379. For precise diagrams, and layout, please refer to the original PDF.

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High speed switching time. Lead-free  Low saturation voltage:VCE(sat)=0.5V(Max).  PC=1~2W...

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time. Lead-free  Low saturation voltage:VCE(sat)=0.5V(Max).  PC=1~2W(Mounted on ceramic substrate).  Small flat package.  Complementary: KTA1666. KTC4379 APPLICATIONS  Power amplifier application.  Power switching application. ORDERING INFORMATION Type No. Marking KTC4379 UO/UY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 2 IB Base Current 0.4 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A

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