Full PDF Text Transcription for MJD112 (Reference)
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MJD112. For precise diagrams, and layout, please refer to the original PDF.
Epitaxial Planar NPN Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight L...
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b Lead-free Lead Formed for Surface Mount Applications. Straight Lead. MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current 2A ICP Collector Power Dissipation 4A IB Base Current 50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)025 Rev.A www.gmesemi.
MJD112 Datasheet
