Full PDF Text Transcription for MJD3055 (Reference)
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MJD3055. For precise diagrams, and layout, please refer to the original PDF.
Epitaxial Planar NPN Transistor FEATURES Lead formed for surface mount applications. Pb Lead-free Straight lead. Electrically similar to popular MJE3055T. DC curr...
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Straight lead. Electrically similar to popular MJE3055T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. Production specification MJD3055 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current 10 A IB Base Current 6A PC Collector Power Dissipation 20 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)032 Rev.A www.gmesemi.
MJD3055 Datasheet
