MJD3055 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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MJD3055 MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mou

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MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE &

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MJD3055T4 Datasheet Low voltage NPN power transistor TAB 23 1 DPAK C 2, TAB 1 B Features • Surface-mounting DPAK (TO-252) power package in tape and

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MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general pur

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www.DataSheet4U.com MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for g

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD2955/D Complementary Power Transistors • • • • • • MJD2955 PNP MJD3055 SILICON POW

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Epitaxial Planar NPN Transistor FEATURES  Lead formed for surface mount applications. Pb Lead-free  Straight lead.  Electrically similar to po

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SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications

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