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MMBD353 - Dual Hot Carrier Mixer Diodes

Download the MMBD353 datasheet PDF. This datasheet also covers the MMBD352 variant, as both devices belong to the same dual hot carrier mixer diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Very low capacitance.
  • Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage.
  • IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBD352-GME.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number Description
MMBD352 Dual Hot Carrier Mixer Diodes
MMBD352W Schottky Barrier Diode
MMBD354 Dual Hot Carrier Mixer Diodes
MMBD355 Dual Hot Carrier Mixer Diodes
MMBD301 Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD355 ORDERING INFORMATION Type No. Marking MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Limits 7.0 300 417 -55 to +150 Unit V mW ℃/W ℃ C138 Rev.A www.gmicroelec.