| Part Number | MMBD353 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipation Pd=300mW
z Pb-Free package is available.
AP.
z Very low capacitance * Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage *IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD35. |
MMBD353 Datasheet and Specifications PDF
The MMBD353 is a Dual Hot Carrier Mixer Diodes.
| Part Number | MMBD353 Datasheet |
|---|---|
| Description | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| Manufacturer | Won-Top Electronics |
| Overview |
® WON-TOP ELECTRONICS
MMBD352 / 353 / 354 / 355
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
L
Low Forward Voltage PN Junction Guard Ring for Transient and
A
ESD .
* Very Low Capacitance L * Low Forward Voltage * PN Junction Guard Ring for Transient and A ESD Protection * For General Purpose Switching Applications * Plastic Material * UL Recognition Flammability B C Classification 94V-0 M Mechanical Data * Case: SOT-23, Molded Plastic * Terminals: Pl. |
| Part Number | MMBD353 Datasheet |
|---|---|
| Description | Dual Hot Carrier Mixer Diodes |
| Manufacturer | LGE |
| Overview |
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance— Less than 1.0pF@zero V.
Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free
Applications
Des.
Very low capacitance * Less than 1.0pF@zero V. Low forward voltage *IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355. |