MMDL770 Key Features
- Low reverse leakage-IR=200nA(Max.)
- Very Low Capacitance-1.0pF @20V
- Extremely Low minority carrier lifetime
- High reverse leakage-70V(min.)
- Part: MMDL770
- Manufacturer: Galaxy Microelectronics
- Size: 221.59 KB
Other MMDL770 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Won-Top Electronics |
MMDL770 | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
ETL |
MMDL770T1 | Schottky Barrier Diode |
onsemi |
MMDL770T1 | Schottky Barrier Diode |
|
onsemi |
MMDL770T1G | Schottky Barrier Diode |
MMDL770 Description
Production specification Schottky Barrier Diode.
MMDL770 Applications
- For high-efficiency UHF and VHF detector applications