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MMDL770 - Schottky Barrier Diode

Key Features

  • Low reverse leakage.
  • IR=200nA(Max. ).
  • Very Low Capacitance.
  • 1.0pF @20V.
  • Extremely Low minority carrier lifetime.
  • High reverse leakage.
  • 70V(min. ) Pb Lead-free MMDL770.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.).  Very Low Capacitance—1.0pF @20V.  Extremely Low minority carrier lifetime.  High reverse leakage—70V(min.) Pb Lead-free MMDL770 APPLICATIONS  For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking MMDL770 5H Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC Reverse Voltage VR 70 Power Dissipation Thermal resistance,junction to ambient air PD RθjA 200 635 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V mW ℃/W ℃ ℃ B048 Rev.A www.gmesemi.