G1006A mosfet equivalent, n-channel mosfet.
*
VDSS RDS(ON)
ID
@10V (Typ)
100V 140 mΩ
6A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Ex.
It is ESD protected.
General Features
*
VDSS RDS(ON)
ID
@10V (Typ)
100V 140 mΩ
6A
* High density cell de.
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