G2003A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 190V,ID =3A
RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V
(Typ:430mΩ) (Typ:440mΩ)
* High density cell design for ultra low Rdson
* Fully char.
General Features
* VDS = 190V,ID =3A
RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V
(Typ:430mΩ) (Typ:440mΩ).
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