G2K3N10 mosfet equivalent, n-channel enhancement mode power mosfet.
l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 2.5A < 220mΩ < 230mΩ
l 100% Avalanche Tested
l RoHS Compliant
Schematic diagram
Ap.
General Features
l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 2.5A < 220mΩ < 23.
The G2K3N10G uses advanced trench technology to
provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 2.5A.
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