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G2K3N10 Datasheet, GOFORD

G2K3N10 Datasheet, GOFORD

G2K3N10

datasheet Download (Size : 956.69KB)

G2K3N10 Datasheet

G2K3N10 mosfet equivalent, n-channel enhancement mode power mosfet.

G2K3N10

datasheet Download (Size : 956.69KB)

G2K3N10 Datasheet

Features and benefits

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A < 220mΩ < 230mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Ap.

Application

General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A < 220mΩ < 23.

Description

The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A.

Image gallery

G2K3N10 Page 1 G2K3N10 Page 2 G2K3N10 Page 3

TAGS

G2K3N10
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

Manufacturer


GOFORD

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