G30N02 mosfet equivalent, n-channel mosfet.
*
VDSS RDS(ON) ID
@4.5V (Typ)
20V 10.5mΩ 30 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
*
VDSS RDS(ON) ID
@4.5V (Typ)
20V 10.5mΩ 30 A
* High density cell design for ultra low Rdson <.
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