G80N06 Datasheet, GOFORD

G80N06 mosfet equivalent, mosfet.

Avg. rating / M : 1.0 rating-1

Download

Features and benefits

* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Goo.

Application

General Features
* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
* High density cell design for ultra low Rd.

Image gallery

TAGS

Stock & price

MOSFET

G80N04

G80N60UFD

G80

GOFORD

Since 2006. D4U Semicon. | Contact Us | Privacy Policy | Purchase of parts