GSFW3139K mosfet equivalent, 20v p-channel mosfet.
* Advanced MOSFET process technology
* ESD Protection
* Low on-resistance with low gate charge
* Fast switching and reverse body recovery
SOT-883
Schema.
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max.
Drain-Source Voltage
VDS
-20.
The GSFW3139K utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applic.
Image gallery
TAGS
Download (Size : 1.02MB)