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GS4576C36GL - 576Mb CIO Low Latency DRAM

This page provides the datasheet information for the GS4576C36GL, a member of the GS4576C09L 576Mb CIO Low Latency DRAM family.

Datasheet Summary

Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 16M x 36, 32M x 18, and 64M x 9 organizations available.
  • 8 banks.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable Read Latency (RL), row cycle time, and burst sequence.

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Datasheet preview – GS4576C36GL

Datasheet Details

Part number GS4576C36GL
Manufacturer GSI Technology
File Size 2.05 MB
Description 576Mb CIO Low Latency DRAM
Datasheet download datasheet GS4576C36GL Datasheet
Additional preview pages of the GS4576C36GL datasheet.

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Full PDF Text Transcription

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GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.
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