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Pb Free Plating Product
ISSUED DATE :2006/01/16 REVISED DATE :
G2308E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m
1.2A
Description
The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications.
Features
*Capable of 2.5V gate drive *Lower on-resistance *2KV ESD Capability
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.