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G2308E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

Key Features

  • Capable of 2.5V gate drive.
  • Lower on-resistance.
  • 2KV ESD Capability Package Dimensions TPU.34).

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Datasheet Details

Part number G2308E
Manufacturer GTM
File Size 327.28 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G2308E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.2A Description The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features *Capable of 2.5V gate drive *Lower on-resistance *2KV ESD Capability Package Dimensions TPU.34)QBDLBHF* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.