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GE01N60 Datasheet Preview

GE01N60 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2005/01/27
REVISED DATE :
GE01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
8
1.6A
Description
The GE01N60 provide the designer with the best combination of fast switching.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
DC-DC, DC-AC converters for telecom, industrial and consumer environment.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
600
20
1.6
1
6
39
0.31
13
1.6
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
3.2
62
Unit
/W
/W
GE01N60
Page: 1/5




GTM

GE01N60 Datasheet Preview

GE01N60 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
ISSUED DATE :2005/01/27
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 600
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.6
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 0.8 -
S VDS=50V, ID=0.8A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 100 uA VDS=600V, VGS=0
- 500 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
7.2 8.0
7.7 -
1.5 -
2.6 -
8-
5-
14 -
7-
286 -
25 -
5-
VGS=10V, ID=0.8A
ID=1.6A
nC VDS=480V
VGS=10V
VDD=300V
ID=1.6A
ns VGS=10V
RG=10
RD=187.5
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
1.6
6
Unit Test Conditions
V IS=1.6A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.5V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A.
3. Pulse width 300us, duty cycle 2%.
GE01N60
Page: 2/5


Part Number GE01N60
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 5 Pages
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