GE08P20
GE08P20 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
- Ro HS pliant
Features
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings -200 ±20 -8 -5 -30 96 0.77 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit /W /W
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ISSUED DATE :2006/01/19 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient unless otherwise specified)
Min. -200 -2.0 Typ. -0.03 4 20 5 13 12 14 64 28 1210 170 45 3.6 Max. -4.0 ±100 -25 -100 680 32 5.4 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-5A VGS= ±20V VDS=-200V, VGS=0 VDS=-160V, VGS=0 VGS=-10V, ID=-4A ID=-5A VDS=-160V VGS=-4.5V VDS=-100V ID=-5A VGS=-10V RG=10 RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 )
VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Total Gate Charge
Gate-Source...