GE01N60 Datasheet | GTM

Description The GE01N60 provide the designer with the best bination of fast switching. The TO-220 package is universally preferred for all mercial-industrial applications. The device is suited for DC-DC, DC-AC converters for tele, industrial and consumer environment. - Dynamic dv/dt Rating - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 600 20 1.6 1 6 39 0.31 13 1.6 0.5 -55 ~ +150 Unit V V A A A W W/ m J A m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 3.2 62 Unit /W /W Page: 1/5 .. ISSUED DATE :2005/01/27 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 2.0 Typ. 0.6 0.8 7.2 7.7 1.5 2.6 8 5 14 7 286 25 5 Max. 4.0 100 100 500 8.0 p F ns n C Unit V V/ V S n A u A u A Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=50V, ID=0.8A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V,...