• Part: GE02N60
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 281.35 KB
Download GE02N60 Datasheet PDF
GTM
GE02N60
GE02N60 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description The GE02N60 provide the designer with the best bination of fast switching. The TO-220 package is universally preferred for all mercial-industrial applications. The device is suited for DC-DC, DC-AC converters for tele, industrial and consumer environment. - Dynamic dv/dt Rating - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 600 ±20 2 1.26 6 39 0.31 200 2 2 -55 ~ +150 Unit V V A A A W W/ m J A m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 3.2 62 Unit /W /W Page: 1/5 .. ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 600 2.0 Typ. 0.6 0.8 13.9 1.9 8.2 8.8 10 21.3 8.8 155 27 14 Max. 4.0 ±100 100 500 9.0 p F ns n C Unit V V/ V S n A u A u A Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=1A VGS= ±20V VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=1A ID=2A VDS=480V VGS=10V VDD=300V ID=2A VGS=10V RG=10 RD=150 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source...