GE03N70 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol -/A/H VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 600/650/700 20 3.3 2.1 13.2 45 0.36 85 3.3 3.3 -55 ~ +150 Unit V V A A A W W/ m J A m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 62 Unit /W /W 1/5 .. ISSUED DATE :2005/01/04 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Min. 600 Typ. 0.6 2.0 11.4 3.1 4.2 8.4 6 17.7 5.9 600 45 4 Max. 4.0 1 100 500 4.0 p F ns n C Unit V V V V/ V S u A u A u A Test Conditions VGS=0, ID=250u A VGS=0, ID=250u A VGS=0, ID=250u A A H Symbol Drain-Source Breakdown Voltage BVDSS 650 700 Breakdown Voltage Temperature Coefficient BVDSS / Tj - Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=1.6A VGS= 20V Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=1.6A ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A VGS=10V RG=10 RD=91 VGS=0V VDS=25V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output...