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GE13003 - NPN SILICON POWER TRANSISTOR

General Description

The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical.

It is particularly suited for 115 and 220v Switch-mode.

Key Features

  • Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 700V Blocking Capability SOA and Switching.

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Datasheet Details

Part number GE13003
Manufacturer GTM
File Size 493.42 KB
Description NPN SILICON POWER TRANSISTOR
Datasheet download datasheet GE13003 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2005/01/12 REVISED DATE : GE13003 Description NPN SILICON POWER TRANSISTOR The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115 and 220v Switch-mode. Features Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 700V Blocking Capability SOA and Switching Application Information tc @ 1A, 100 is 290ns(Typ) Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.