GE1046 Datasheet | GTM

Description Features P NP E PITAX IAL PL ANAR T RANS ISTO R The GE1046 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =-1.0V (Max.) @ IC=-2A, IB=-0.2A, Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature TA=25 TC=25 Symbol VCBO VCEO VEBO IC IB PD PD TJ Tstg Ratings -60 -60 -7 -3 -0.5 2 20 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(on) - h FE1 - h FE2 f T Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. -60 -60 -7 100 20 Typ. 30 45 0.4 1.7 0.5 unless otherwise noted) Max. -100 -100 -1.0 -1.0 320 - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Unit V V V u A u A V V IC=-100u A, IE=0 IC=-50m A, IB=0 IE=-100u A, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A Test Conditions VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A MHz p F u S VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz See specified test circuit 1/3 ISSUED DATE :2005/08/10 REVISED DATE : Classification Of h FE1 Rank Range Y 100 - 200 GR 160 - 320 Switching Time Test Circuit Characteristics Curve 2/3 ISSUED DATE :2005/08/10 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application...