GI1182 Overview
Features The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE.
| Part number | GI1182 |
|---|---|
| Datasheet | GI1182_GTM.pdf |
| File Size | 306.63 KB |
| Manufacturer | GTM |
| Description | PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
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Features The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE.
| Part Number | Description |
|---|---|
| GI1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI127 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1386 | PNP EPITAXIAL SILICON TRANSISTOR |
| GI15N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI15T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI1952 | PNP HIGH SPEED SWITCHING TRANSISTOR |