DESCRIPTION
FEATURES
NPN EPITAXIAL PLANAR T RANSISTOR Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A, Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD TJ Tstg Ratings 60 50 6 5 9 20 150 -55 ~ +150 Unit V V V A A W ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. 60 50 6 70 30 Typ. 30 100 0.1 1.4 0.2 unless otherwise noted) Max. 100 100 0.4 280 *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Unit V V V uA u...
GTM
