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GI1182 Datasheet PDF

GTM GI1182

The GI1182 is designed for medium power amplifier applications.
Part No. GI1182
Datasheet GI1182 Download
Manufacturer
GTM
Description PNP SILICON EPITAXIAL PLANAR TRANSISTOR
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GI1182 datasheet page 1 preview

DESCRIPTION

FEATURES

Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse, Pw=100ms) Total Power Dissipation(TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -40 -32 -5 -2 -3 10 Unit V V V A A W

ELECTRICAL CHARACTERISTICS

(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -500 100 50 , unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -1 uA VCB=-20V, IE=0 -1 uA VEB...
GI1182 page 2 preview