GI1182 Description
Features The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE.
GI1182 is PNP SILICON EPITAXIAL PLANAR TRANSISTOR manufactured by GTM.
| Part Number | Description |
|---|---|
| GI1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI127 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1386 | PNP EPITAXIAL SILICON TRANSISTOR |
| GI15N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Features The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE.