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GI494 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side switch in SMPS and general purpose applications.

Simple Drive Requirement Lower O

Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±12 55 39 120 63 0.42 -55 ~ +175.

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Datasheet preview – GI494

Datasheet Details

Part number GI494
Manufacturer GTM
File Size 282.57 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI494 Datasheet
Additional preview pages of the GI494 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : GI494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A Description The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side switch in SMPS and general purpose applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
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