GT2530 Datasheet - GTM

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GT2530 Features

* Low Gate Change

* Low On-resistance

* RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ra

GT2530 General Description

N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial.

GT2530 Datasheet (416.54 KB)

GT2530 Datasheet Preview — Preview of GT2530 PDF

Datasheet Details

Part number:

GT2530

Manufacturer:

GTM

File Size:

416.54 KB

Description:

N and p-channel enhancement mode power mosfet.

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GT2530 AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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GT2530 Features

GT2530 General Description

Datasheet Details

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Description:

GT2530 Distributor