ISSUED DATE :2006/01/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.06
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 600 - mS VDS=10V, ID=500mA
Gate-Source Leakage Current
IGSS - - 30 uA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 10 uA VDS=50V, VGS=0
- 100 uA VDS=40V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 1.8
VGS=10V, ID=500mA
- 3.2
VGS=4.5V, ID=200mA
1 1.6
ID=500mA
0.5 - nC VDS=40V
0.5 -
VGS=4.5V
12 -
VDS=25V
10 -
ID=500mA
56
-
ns VGS=10V
RG=3.3
29 -
RD=50
32 50
VGS=0V
8 - pF VDS=25V
6-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.3
Unit Test Conditions
V IS=600mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 250 /W when mounted on Min. copper pad.
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