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GT2622 Datasheet Preview

GT2622 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GT2622 pdf
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Pb Free Plating Product
ISSUED DATE :2006/01/16
REVISED DATE :
GT2622
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
1.8
520mA
Description
The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Surface Mount package
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
50
±20
520
410
1.5
0.8
0.006
-55 ~ +150
Value
150
Unit
V
V
mA
mA
A
W
W/
Unit
/W
1/4



GTM
GTM

GT2622 Datasheet Preview

GT2622 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

GT2622 pdf
ISSUED DATE :2006/01/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.06
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 600 - mS VDS=10V, ID=500mA
Gate-Source Leakage Current
IGSS - - 30 uA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 10 uA VDS=50V, VGS=0
- 100 uA VDS=40V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 1.8
VGS=10V, ID=500mA
- 3.2
VGS=4.5V, ID=200mA
1 1.6
ID=500mA
0.5 - nC VDS=40V
0.5 -
VGS=4.5V
12 -
VDS=25V
10 -
ID=500mA
56
-
ns VGS=10V
RG=3.3
29 -
RD=50
32 50
VGS=0V
8 - pF VDS=25V
6-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.3
Unit Test Conditions
V IS=600mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 250 /W when mounted on Min. copper pad.
2/4


Part Number GT2622
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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