GT2625 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

Datasheet Details

Part number	GT2625
Manufacturer	GTM
File Size	347.50 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download	GT2625 Download (PDF)

The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GT2625 is universally used for all commercial-industrial applications.

Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 135m -2.

Low Gate Charge.
Low On-resistance Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.

Part Number	Description
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