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GTC217E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

  • Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Li.

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Datasheet preview – GTC217E

Datasheet Details

Part number GTC217E
Manufacturer GTM
File Size 305.06 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTC217E Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A The GTC217E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTC217E is universally used for all commercial-industrial applications. * Lower Gate Charge *Small Package Outline *RoHS Compliant Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.
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