Datasheet Details
| Part number | GTC9926E |
|---|---|
| Manufacturer | GTM |
| File Size | 359.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 GTC9926E Datasheet
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General Description
ultra low on-resistance and cost-effectiveness.
Key Features
- Low on-resistance.
- Capable of 2.5V gate drive.
- Low drive current.
- Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 , VGS@10V Continuous Drain Current3 , VGS@10V Pulsed Drain Current.