GTC9926E
GTC9926E is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GTC9926E provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Features
- Low on-resistance
- Capable of 2.5V gate drive
- Low drive current
- Surface mount package
Package Dimensions
REF.
A A1 b c D
Millimeter
Min. Max.
- 1.20
REF.
E E1 e L S
Millimeter
Min. Max.
0.65 BSC
0°
8°
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 , VGS@10V Continuous Drain Current3 , VGS@10V Pulsed Drain...
