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GTC217E Datasheet PDF

GTM GTC217E

The GTC217E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTC217E is universally used for all commercial-industrial applications.
Part No. GTC217E
Datasheet GTC217E Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GTC217E datasheet page 1 preview

DESCRIPTION

FEATURES

Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Value 83 Unit /W Rthj-a GTC217E Page: 1/4 ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B

ELECTRICAL CHARACTERISTICS

(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified) Min.
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