Package Dimensions
REF. A A1 b c D
Millimeter Min. 0.05 0.19 0.09 2.90
Max. 1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min. 6.20 4.30 0.45 0°
Max. 6.60 4.50 0.75 8°
0.65 BSC
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Li.
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Pb Free Plating Product
ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B
GTC217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 22m 7A
The GTC217E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTC217E is universally used for all commercial-industrial applications. * Lower Gate Charge *Small Package Outline *RoHS Compliant
Description
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min.
0.05 0.19 0.09 2.90
Max.
1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min.
6.20 4.30 0.45 0°
Max.
6.60 4.50 0.75 8°
0.
GTC217E Datasheet
