GTC217E
GTC217E is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min.
0.05 0.19 0.09 2.90
Max.
1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min.
6.20 4.30 0.45 0°
Max.
6.60 4.50 0.75 8°
0.65 BSC
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol
Max.
Value 83
Unit /W
Rthj-a
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ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified)
Min. 20 0.5 Typ. 24 9.3 0.6 3.6 820 934 860 510 231 164 137 p F Max. 1.0 ±10 1 5 22 30 ns n C Unit V V S u A u A u A m Test Conditions VGS=0, ID=250u A VDS=VGS, ID=250u A VDS=5V, ID=7A VGS= ±10V VDS=16V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6.6A VGS=2.5V, ID=5.5A ID=7A VDS=10V VGS=4.5V VDS=10V ID=1A VGS=4.5V RG=6 RL=10 VGS=0V VDS=10V f=1.0MHz
Symbol BVDSS VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Symbol VSD Trr Qrr...
