GTC9926
GTC9926 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GTC9926 provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
- Low on-resistance
- Capable of 2.5V gate drive
- Low drive current
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min.
0.05 0.19 0.09 2.90
Max.
1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min.
6.20 4.30 0.45 0°
Max.
6.60 4.50 0.75 8°
0.65 BSC
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Current ,VGS@4.5V Pulsed Drain Current Power Dissipation
Operating Junction and Storage Temperature Range
1, 3 3
Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg
Ratings 20 ±12 6 4.8 20 1 -55 ~ +150 0.008
Unit V V A A A W W/
Linear Derating Factor
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-a
Value 125
Unit /W
1/4
ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient unless otherwise specified)
Min. 20 0.5 Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.2 ±100 1 25 28 38 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=6A VGS= ±12V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A ID=6A VDS=20V VGS=5.0V VDS=10V ID=1A VGS=5V RG=6 RD=10 VGS=0V VDS=20V f=1.0MHz
Symbol BVDSS
BVDSS /...
