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GTC9922E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 6.8 5.4 25 1 0.008 -55 ~ +150 Unit V V A A A W W/ Total.

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Datasheet Details

Part number GTC9922E
Manufacturer GTM
File Size 302.45 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTC9922E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2007/01/25 REVISED DATE : GTC9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 15m 6.8A The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application *Surface mount package Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.