Datasheet Details
| Part number | GTC9926 |
|---|---|
| Manufacturer | GTM |
| File Size | 350.97 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 GTC9926 Datasheet
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General Description
The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Low on-resistance Capable of 2.5V gate drive Low drive currentKey Features
- Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Current ,VGS@4.5V Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 1, 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 6 4.8 20 1 -55.