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GTC9926 Datasheet Preview

GTC9926 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
GTC9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
6A
Description
The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current3 ,VGS@4.5V
Drain Current3 ,VGS@4.5V
Pulsed Drain Current1,
Power Dissipation
VDS
VGS
ID @Ta=25
ID @Ta=70
IDM
PD @Ta=25
Operating Junction and Storage Temperature Range Tj, Tstg
Linear Derating Factor
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
6
4.8
20
1
-55 ~ +150
0.008
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4




GTM

GTC9926 Datasheet Preview

GTC9926 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.03
-
20
-
-
-
1.2
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 28 m VGS=4.5V, ID=6.0A
- 38
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 23 -
ID=6A
Qgs - 4.5 - nC VDS=20V
Qgd - 7 -
VGS=5.0V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 30 -
VDS=10V
Tr
Td(off)
-
-
70
40
-
-
ID=1A
ns VGS=5V
RG=6
Tf - 65 -
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1035 -
- 320 -
- 150 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Forward On Voltage2
VSD
Continuous Source Current(Body Diode)
IS
Min.
-
-
Typ.
-
-
Max.
1.2
1.54
Unit Test Conditions
V IS=1.7A, VGS=0, Tj=25
A VD= VG=0V, VS=1.3V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208
/W when mounted on Min. copper pad.
2/4


Part Number GTC9926
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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GTC9926 Datasheet PDF






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