GTC9926E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GTC9926E

Datasheet Details

Part number	GTC9926E
Manufacturer	GTM
File Size	359.89 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GTC9926E Datasheet
Additional preview pages of the GTC9926E datasheet.

Product details

Description

The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

Low on-resistance.
Capable of 2.5V gate drive.
Low drive current.
Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 , VGS@10V Continuous Drain Current3 , VGS@10V Pulsed Drain Current.

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Other Datasheets by GTM

GTC9926 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Published: Oct 5, 2007 |