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GTC9926E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance.
  • Capable of 2.5V gate drive.
  • Low drive current.
  • Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 , VGS@10V Continuous Drain Current3 , VGS@10V Pulsed Drain Current.

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Datasheet preview – GTC9926E

Datasheet Details

Part number GTC9926E
Manufacturer GTM
File Size 359.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTC9926E Datasheet
Additional preview pages of the GTC9926E datasheet.

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Full PDF Text Transcription

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ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.6A Description The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.
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