GTC9926E mosfet equivalent, n-channel enhancement mode power mosfet.
*Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package
Package Dimensions
REF.
A A1 b c D
Millimeter
Min. Max.
-
1.20
0.05
0.15
.
or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.
The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount packa.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 359.89KB)